The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Aug. 03, 2017
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Atsushi Ohoka, Kyoto, JP;

Osamu Kusumoto, Nara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/26 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/167 (2006.01); H01L 21/8234 (2006.01); H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7815 (2013.01); H01L 29/0646 (2013.01); H01L 29/0684 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/26 (2013.01); H01L 29/41741 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 21/0243 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/046 (2013.01); H01L 21/0465 (2013.01); H01L 21/823481 (2013.01); H01L 27/085 (2013.01); H01L 29/0619 (2013.01); H01L 29/167 (2013.01); H01L 29/7811 (2013.01);
Abstract

A semiconductor device including a main region, a sense region, a separation region electrically isolating the main and sense region regions includes a first semiconductor layer positioned on the main surface of a semiconductor substrate, a plurality of main cells disposed in the main region, and a plurality of sense cells disposed in the sense region. Source regions of the main cell become conductive with a source electrode and source regions of the sense cell become conductive with a sense electrode. The separation region includes a plurality of second conductivity type separation body regions and a barrier region and is disposed within a first semiconductor layer and is disposed to abut on the surface of the first semiconductor layer.


Find Patent Forward Citations

Loading…