The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Oct. 19, 2010
Chiaki Kudou, Hyogo, JP;
Kenya Yamashita, Hyogo, JP;
Masahiko Niwayama, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor deviceincludes: a first silicon carbide layerarranged on the principal surface of a semiconductor substrate; a first impurity regionof a first conductivity type arranged in the first silicon carbide layer; a body regionof a second conductivity type; a contact regionof the second conductivity type which is arranged at a position in the body region that is deeper than the first impurity regionand which contains an impurity of the second conductivity type at a higher concentration than the body region; a drift regionof the first conductivity type; and a first ohmic electrodein ohmic contact with the first impurity regionand the contact region, wherein: a contact trench, which penetrates through the first impurity region, is provided in the first silicon carbide layer; and the first ohmic electrodeis arranged in the contact trenchand is in contact with the contact regionon at least a portion of a side wall lower portionL and a bottom surfaceof the contact trench.