Kyoto, Japan

Masahiko Niwayama

This inventor holds 22 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Panasonic Corporation, Matsushita Electronics Corporation, Matsushita Electric Industrial Co., Ltd.. Active years: 1998-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiko Niwayama. Retrieved from https://idiyas.com/inventor/masahiko-niwayama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 59.1

 

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 58(Granted Patents)


Company Filing History:


Years Active: 1998-2022

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Areas of Expertise:
Silicon Carbide
Temperature Sensor
Solid-State Imaging
Semiconductor Device
Manufacturing Method
Lattice Defect
Ion Implanter
Contact Region
Impurity Introduction
Substrate Resistance
Fabrication Process
Semiconductor Element
22 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Masahiko Niwayama

Introduction: Masahiko Niwayama is a prominent inventor based in Kyoto, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 22 patents to his name, Niwayama has been instrumental in advancing the performance and functionality of various semiconductor devices.

Latest Patents: Niwayama's recent inventions showcase his expertise in developing innovative semiconductor devices. One of his notable patents is for a semiconductor device that includes a temperature sensing function capable of accurately measuring temperature. This device consists of a first semiconductor layer situated on a semiconductor substrate, featuring a temperature sensor with a sensing-body region of a second conductivity type. The temperature sensor includes strategic arrangements of different conductive regions, ensuring precise temperature readings.

Another significant patent pertains to a silicon carbide semiconductor device and its manufacturing method. This device comprises a silicon carbide semiconductor layer along with a gate insulating layer made of silicon oxide. A critical aspect of this invention is the carbon transition layer, which enhances the overall efficiency and performance of the semiconductor device by controlling impurity concentrations.

Career Highlights: Throughout his career, Niwayama has worked with leading companies such as Panasonic Corporation and Matsushita Electronics Corporation. His experience at these organizations has greatly influenced his innovative approach and has allowed him to make substantial contributions to semiconductor research and development.

Collaborations: Niwayama has collaborated with numerous talented professionals during his career. Noteworthy among his coworkers are Masao Uchida and Kenji Yoneda, who have contributed to the successful completion of various projects in the semiconductor field alongside Niwayama.

Conclusion: Masahiko Niwayama stands out as a leading inventor in semiconductor technology, with a wealth of patents that illustrate his innovative ideas and solutions. His work not only highlights his technical proficiency but also represents significant advancements in the industry, paving the way for future innovations in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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