The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Aug. 29, 2011
Applicants:

Chiaki Kudou, Hyogo, JP;

Masahiko Niwayama, Kyoto, JP;

Ryo Ikegami, Hyogo, JP;

Inventors:

Chiaki Kudou, Hyogo, JP;

Masahiko Niwayama, Kyoto, JP;

Ryo Ikegami, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device according to the present invention includes a contact regionof a second conductivity type which is provided in a body region. The contact regionincludes a first regionin contact with a first ohmic electrodeand a second regionlocated at a position deeper than that of the first regionand in contact with the body region. The first regionand the second regioneach have at least one peak of impurity concentration. The peak of impurity concentration in the first regionhas a higher value than that of the peak of impurity concentration in the second region


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