Hyogo, Japan

Ryo Ikegami


Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2014

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2 patents (USPTO):Explore Patents

Title: Ryo Ikegami: Innovator in Semiconductor Technology

Introduction

Ryo Ikegami is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on the development of advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Ikegami's latest patents include innovative designs for semiconductor elements and methods of manufacturing them. One of his notable inventions is a semiconductor device that features a semiconductor substrate and a first silicon carbide semiconductor layer. This layer includes a drift region, a body region, and an impurity region, all designed to optimize the device's functionality. Another patent describes a silicon carbide semiconductor device with a contact region that enhances the device's performance by incorporating regions with varying impurity concentrations.

Career Highlights

Ryo Ikegami has established himself as a key figure in the semiconductor industry. He is currently employed at Panasonic Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that meet the growing demands of modern electronics.

Collaborations

Ikegami collaborates with several talented individuals in his field, including Masahiko Niwayama and Masao Uchida. These partnerships foster innovation and contribute to the advancement of semiconductor technologies.

Conclusion

Ryo Ikegami's contributions to semiconductor technology are noteworthy, and his patents reflect his commitment to innovation. His work at Panasonic Corporation and collaborations with esteemed colleagues further enhance his impact on the industry.

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