Panasonic Corporation

Ryo Ikegami

Masahiko Niwayama

Masao Uchida

Chiaki Kudou

Yuki Tomita

A semiconductor device disclosed in the present application includes: a semiconductor substrate; a first silicon carbide semiconductor layer located on a principal surface of the semiconductor substrate, the first silicon carbide semiconductor layer including a drift region of a first conductivity type, a body region of a second conductivity type, and an impurity region of a first conductivity type; a trench provided in the first silicon carbide semiconductor layer so as to reach inside of the drift region; a second silicon carbide semiconductor layer of the first conductivity type located at least on a side surface of the trench so as to be in contact with the impurity region and the drift region; a gate insulating film; a gate electrode; a first ohmic electrode; and a second ohmic electrode. The body region includes a first body region which is in contact with the second silicon carbide semiconductor layer on the side surface of the trench, and a second body region which is in contact with the drift region and has a smaller average impurity concentration than the first body region.

Semiconductor element and method of manufacturing thereof

A semiconductor device according to the present invention includes a contact regionof a second conductivity type which is provided in a body region. The contact regionincludes a first regionin contact with a first ohmic electrodeand a second regionlocated at a position deeper than that of the first regionand in contact with the body region. The first regionand the second regioneach have at least one peak of impurity concentration. The peak of impurity concentration in the first regionhas a higher value than that of the peak of impurity concentration in the second region

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Hyogo, Japan

Ryo Ikegami