The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Sep. 30, 2008
Yuji Harada, Hyogo, JP;
Kazuyuki Sawada, Toyama, JP;
Masahiko Niwayama, Kyoto, JP;
Masaaki Okita, Toyama, JP;
Yuji Harada, Hyogo, JP;
Kazuyuki Sawada, Toyama, JP;
Masahiko Niwayama, Kyoto, JP;
Masaaki Okita, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.