The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Aug. 16, 2005
Applicants:
Kenji Yoneda, Kyoto, JP;
Masahiko Niwayama, Kyoto, JP;
Inventors:
Kenji Yoneda, Kyoto, JP;
Masahiko Niwayama, Kyoto, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 1/08 (2006.01); H01J 3/14 (2006.01); H01J 3/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.
Yoneda, Kenji. (2009). Semiconductor device manufacturing method and ion implanter used therein (U.S. Patent No. 7638782). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7638782
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile