The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8222107 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 17, 2012

Filed:

Jul. 28, 2010
Applicants:

Koutarou Tanaka, Osaka, JP;

Masahiko Niwayama, Kyoto, JP;

Masao Uchida, Osaka, JP;

Inventors:

Koutarou Tanaka, Osaka, JP;

Masahiko Niwayama, Kyoto, JP;

Masao Uchida, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of producing a semiconductor device according to the present invention includes: a step of implanting an impurity into a semiconductor layerby using a first implantation mask layer, thereby forming a body region; a step of implanting an impurity by using the first implantation mask layerand a second implantation mask layer, thereby forming a contact regionwithin the body region; a step of forming a third implantation mask layer, and thereafter selectively removing the second implantation mask layer; a step of forming a side wallon a side face of the first implantation mask layer; and a step of implanting an impurity to form a source regionwithin the body region


Find Patent Forward Citations

Tanaka, Koutarou. (2012). Method for producing semiconductor element (U.S. Patent No. 8222107). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8222107

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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