Panasonic Corporation

Matsushita Electronics Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Masahiko Niwayama

Masao Uchida

Kenji Yoneda

Chiaki Kudou

Yuji Matsuda

Yuji Harada

Kunimasa Takahashi

Takao Kuroda

Hiroko Kubo

Kazuyuki Sawada

Katsuya Ishikawa

Koutarou Tanaka

Keishi Tachikawa

Ryo Ikegami

Osamu Kusumoto

Kenya Yamashita

Saichirou Kaneko

Nobuyuki Horikawa

Yoshimi Shimizu

Atsushi Ohoka

Kazuma Takahashi

Yuki Tomita

Masaaki Okita

A semiconductor device is provided that includes a temperature sensing function that accurately senses a temperature. The semiconductor device includes a first semiconductor layer on a semiconductor substrate, and a temperature sensor. The temperature sensor includes: a sensing-body region of a second conductivity type that is disposed in the first semiconductor layer; a first region of a first conductivity type, and a second region of the first conductivity type that are arranged in the sensing-body region and are apart from each other; and a third region of the second conductivity type that is in the sensing-body region and is between the first region and the second region. A concentration of a first conductivity type impurity in the temperature-sensing conductive layer is higher than a concentration of a first conductivity type impurity in the drift region.

Semiconductor device having a temperature sensor

This silicon carbide semiconductor device includes: a silicon carbide semiconductor layer; a gate insulating layer which is arranged over the silicon carbide semiconductor layer and which includes a silicon oxide film; a gate electrode which is arranged on the gate insulating layer; and a carbon transition layer which is interposed between the silicon carbide semiconductor layer and the silicon oxide film and which has a carbon atom concentration is 10% to 90% of a carbon atom concentration of the silicon carbide semiconductor layer. In a region of the carbon transition layer which is located closer to the silicon oxide film than a position where a nitrogen atom concentration becomes the highest is, a ratio of an integral of nitrogen atom concentrations to an integral of carbon atom concentrations is equal to or greater than 0.11.

Silicon carbide semiconductor device and method for manufacturing same

A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a second region provided in the first region, a second silicon carbide semiconductor layer provided on and in contact with the first silicon carbide semiconductor layer, a first ohmic electrode in ohmic contact with the second region, and an insulating film provided on the second silicon carbide semiconductor layer. The first cell includes a gate electrode, and the second cell includes no electrode configured to control the electric potential of the second silicon carbide semiconductor layer independently of the electric potential of the first ohmic electrode.

Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer

A method for fabricating a semiconductor element according to the present disclosure includes the steps of: (A) forming a first silicon carbide semiconductor layer of a first conductivity type on a semiconductor substrate; (B) forming a first mask to define a body region on the first silicon carbide semiconductor layer; (C) forming a body implanted region of a second conductivity type in the first silicon carbide semiconductor layer using the first mask; (D) forming a sidewall on side surfaces of the first mask; (E) defining a dopant implanted region of the first conductivity type and a first body implanted region of the second conductivity type in the first silicon carbide semiconductor layer using the first mask and the sidewall; and (F) thermally treating the first silicon carbide semiconductor layer.

Semiconductor element, semiconductor device, and semiconductor element manufacturing method

A semiconductor device disclosed in the present application includes: a semiconductor substrate; a first silicon carbide semiconductor layer located on a principal surface of the semiconductor substrate, the first silicon carbide semiconductor layer including a drift region of a first conductivity type, a body region of a second conductivity type, and an impurity region of a first conductivity type; a trench provided in the first silicon carbide semiconductor layer so as to reach inside of the drift region; a second silicon carbide semiconductor layer of the first conductivity type located at least on a side surface of the trench so as to be in contact with the impurity region and the drift region; a gate insulating film; a gate electrode; a first ohmic electrode; and a second ohmic electrode. The body region includes a first body region which is in contact with the second silicon carbide semiconductor layer on the side surface of the trench, and a second body region which is in contact with the drift region and has a smaller average impurity concentration than the first body region.

Semiconductor element and method of manufacturing thereof

A semiconductor deviceincludes: a first silicon carbide layerarranged on the principal surface of a semiconductor substrate; a first impurity regionof a first conductivity type arranged in the first silicon carbide layer; a body regionof a second conductivity type; a contact regionof the second conductivity type which is arranged at a position in the body region that is deeper than the first impurity regionand which contains an impurity of the second conductivity type at a higher concentration than the body region; a drift regionof the first conductivity type; and a first ohmic electrodein ohmic contact with the first impurity regionand the contact region, wherein: a contact trench, which penetrates through the first impurity region, is provided in the first silicon carbide layer; and the first ohmic electrodeis arranged in the contact trenchand is in contact with the contact regionon at least a portion of a side wall lower portionL and a bottom surfaceof the contact trench.

Semiconductor device and process for production thereof

This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and the impurity region to reach the drift layer; a gate insulating film which is arranged on surfaces of the trench; and a gate electrode which is arranged on the gate insulating film. The surfaces of the trench include a first side surface and a second side surface which is opposed to the first side surface. The concentration of a dopant of the second conductivity type is higher at least locally in a portion of the body region which is located beside the first side surface than in another portion of the body region which is located beside the second side surface.

Silicon carbide semiconductor element

A semiconductor device according to the present invention includes a contact regionof a second conductivity type which is provided in a body region. The contact regionincludes a first regionin contact with a first ohmic electrodeand a second regionlocated at a position deeper than that of the first regionand in contact with the body region. The first regionand the second regioneach have at least one peak of impurity concentration. The peak of impurity concentration in the first regionhas a higher value than that of the peak of impurity concentration in the second region

Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof

A method of producing a semiconductor device according to the present invention includes: a step of implanting an impurity into a semiconductor layerby using a first implantation mask layer, thereby forming a body region; a step of implanting an impurity by using the first implantation mask layerand a second implantation mask layer, thereby forming a contact regionwithin the body region; a step of forming a third implantation mask layer, and thereafter selectively removing the second implantation mask layer; a step of forming a side wallon a side face of the first implantation mask layer; and a step of implanting an impurity to form a source regionwithin the body region

Method for producing semiconductor element

A semiconductor manufacturing includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-&#x3b8; directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.

Semiconductor manufacturing apparatus

A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.

Semiconductor device and method for fabricating the same

Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so as to be adjacent to the RESURF region; an N-type emitter/source region formed in the base region so as to be apart from the RESURF region; a P-type base connection region formed in the base region so as to be adjacent to the emitter/source region; a gate insulating film and a gate electrode overlying the emitter/source region, the base region, and the RESURF region; and a P-type collector region formed in the RESURF region so as to be apart from the base region. Lattice defect is generated in the semiconductor substrate such that a resistance value of the semiconductor substrate is twice or more the resistance value of the semiconductor substrate that depends on the concentration of an impurity implanted in the semiconductor substrate.

Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same

Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

Semiconductor device manufacturing method and ion implanter used therein

A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region. In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

Growing community of inventors

Kyoto, Japan

Masahiko Niwayama