The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Oct. 04, 2004
Kenya Yamashita, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Osamu Kusumoto, Nara, JP;
Kunimasa Takahashi, Osaka, JP;
Masao Uchida, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Kenya Yamashita, Osaka, JP;
Makoto Kitabatake, Nara, JP;
Osamu Kusumoto, Nara, JP;
Kunimasa Takahashi, Osaka, JP;
Masao Uchida, Osaka, JP;
Ryoko Miyanaga, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A gate insulating film which is an oxide layer mainly made of SiOis formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide layered structure is placed in a chamber which has a vacuum pump and exposed to a reduced pressure NO gas atmosphere at a high temperature higher than 1100° C. and lower than 1250° C., whereby nitrogen is diffused in the gate insulating film. As a result, a gate insulating film which is a V-group element containing oxide layer, the lower part of which includes a high nitrogen concentration region, and the relative dielectric constant of which is 3.0 or higher, is obtained. The interface state density of an interface region between the V-group element containing oxide layer and the silicon carbide layer decreases.