The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Oct. 23, 2018
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
PANASONIC CORPORATION, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/025 (2013.01);
Abstract
To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of AlGaN (0≤x<1), an InGaN layer disposed on the n-GaN layer and composed of InGaN, an n-AlGaN layer disposed on the InGaN layer and composed of n-type AlGaN (0≤y<1), and a functional layer disposed on the n-AlGaN layer, wherein the concentration of Mg in the n-GaN layer is higher than the concentration of Mg in the n-AlGaN layer.