Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Other

Akihiko Ishibashi

Isao Kidoguchi

Yoshiaki Hasegawa

Yuzaburo Ban

Toshiya Yokogawa

Kiyoshi Ohnaka

Ayumu Tsujimura

Gaku Sugahara

Masahiro Kume

Yasutoshi Kawaguchi

Ryoko Miyanaga

Hideto Adachi

Satoshi Kamiyama

Masakatsu Suzuki

Kenji Harafuji

Masaki Nobuoka

Nobuyuki Uemura

Naoya Ryoki

Toshitaka Shimamoto

Yasuo Kitaoka

Nobuyuki Otsuka

Akio Ueta

Kentaro Miyano

Minoru Kubo

Takeshi Uenoyama

Toshiya Fukuhisa

Masaya Mannoh

Akira Takamori

Yasuhito Kumabuchi

Yoshihiro Hara

Hisashi Minemoto

Naomi Anzue

Hidemi Takeisi

Yuuzaburou Ban

Kiminori Mizuuchi

Yoshio Okayama

Kiyoyuki Morita

Hiroshi Ohno

Kenya Yamashita

Hiroshi Ono

Susumu Koike

Hiroyoshi Yajima

Keiji Ito

Yoshifumi Takasu

Masaya Mannou

Isao Tashiro

Hiroyuki Furuya

Fumio Kawamura

Takatomo Sasaki

Atsushi Yamada

Yusuke Mori

Atsushi Matsubara

A ScAlMgOmonocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgOmonocrystalline substrate are provided. The ScAlMgOmonocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.

ScAlMgO4 monocrystalline substrate, and method of manufacture thereof

A RAMOsubstrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO(wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMOsubstrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient &#x3c1; of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position &#x3c9;i and measurement position Xi after the measurements of X-ray peak positions &#x3c9;i at a plurality of positions Xi lying on a straight line passing through the center of the RAMOsubstrate. The correlation coefficient &#x3c1; is a measure of correlation between &#x3c9; and measurement position Xi.

[object Object]

A wavelength conversion device including a cavity that includes an RAMOcrystal having a single crystal represented by a first general formula of RAMO, a laser crystal, and a mirror, in which in the first general formula, R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn, and Cd.

Wavelength conversion device

A RAMOsubstrate includes a single crystal represented by a formula of RAMO(in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMOsubstrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.

RAMO4 substrate and manufacturing method thereof

The object of the present invention is to provide a Group III nitride semiconductor light emitting diode having improved light extraction efficiency. A Group III nitride semiconductor light emitting diode according to the present disclosure includes an RAMOlayer including a single crystal represented by the general formula RAMO(wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe (III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn and Cd); and a layered product stacked on the RAMOlayer. The layered product includes at least a light emitting layer including a Group III nitride semiconductor. A degree of flatness of a surface, of the RAMOlayer, opposite to the layered product is lower than a degree of flatness of a surface, of the RAMOlayer, adjacent to the layered product.

Group III nitride semiconductor light emitting diode, and method for producing same

Provided herein is a wavelength converter capable of producing shorter wavelengths by wavelength conversion than in related art. A wavelength converter of the present disclosure includes: a first layer formed of a single crystal represented by general formula RAMO; and a second layer formed of a single crystal represented by the general formula RAMOand having a direction of polarization reversed 180&#xb0; from a direction of polarization of the first layer, wherein, in the general formula, R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd.

Wavelength converter

A Group III nitride semiconductor for growing a high-quality crystal having a low defect density and a method for producing the Group III nitride semiconductor. The Group III nitride semiconductor includes an RAMOsubstrate including a single crystal represented by the general formula RAMO(where R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn and Cd); a p-type Group III nitride crystal layer disposed on the RAMOsubstrate; a plurality of n-type Group III nitride crystal layers disposed on the p-type Group III nitride crystal layer; and a Group III nitride crystal layer disposed on the n-type Group III nitride crystal layers.

Group III nitride semiconductor and method for producing same

To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of AlGaN (0&#x2264;x&#x3c;1), an InGaN layer disposed on the n-GaN layer and composed of InGaN, an n-AlGaN layer disposed on the InGaN layer and composed of n-type AlGaN (0&#x2264;y&#x3c;1), and a functional layer disposed on the n-AlGaN layer, wherein the concentration of Mg in the n-GaN layer is higher than the concentration of Mg in the n-AlGaN layer.

Group III nitride semiconductor with InGaN diffusion blocking layer

A RAMOsubstrate is formed from single crystal represented by a formula of RAMO(in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMOsubstrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

A Group III nitride semiconductor containing: a RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMOsubstrate, having therebetween a dissimilar film that contains a material different from the RAMOsubstrate, and has plural openings.

On an RAMOsubstrate containing a single crystal represented by the general formula RAMO(wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), a buffer layer containing a nitride of In and a Group III element except for In is formed, and a Group III nitride crystal is formed on the buffer layer.

Group III nitride semiconductor, and method for producing same

A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Nitride semiconductor device and production method thereof

A semiconductor light-emitting device according to the present invention includes: a GaN substratecontaining an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structureprovided on a main surface of the GaN substrate; a p-electrodeformed on the multilayer structure; a first n-electrodesubstantially covering the entire rear surface of the GaN substrate; and a second n-electrodeprovided on the first n-electrodeso as to expose at least a portion of the periphery of the first n-electrode

Semiconductor light emitting element and method for manufacturing same

A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.

Nitride semiconductor laser and method for fabricating the same

A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrateand a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate. The multilayer structure includes an active layerthat produces emission and multiple semiconductor layersandthat have been stacked one upon the other between the active layerand the substrateand that include an n-type dopant. Each and every one of the semiconductor layersandincludes Al atoms.

Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration

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Osaka, Japan

Akihiko Ishibashi