The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Oct. 15, 2007
Gaku Sugahara, Nara, JP;
Yasutoshi Kawaguchi, Suita, JP;
Akihiko Ishibashi, Mishima-gun, JP;
Isao Kidoguchi, Kawanishi, JP;
Toshiya Yokogawa, Nara, JP;
Gaku Sugahara, Nara, JP;
Yasutoshi Kawaguchi, Suita, JP;
Akihiko Ishibashi, Mishima-gun, JP;
Isao Kidoguchi, Kawanishi, JP;
Toshiya Yokogawa, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor laser includes a nitride semiconductor substrate with a striped raised portion that extends in a resonant cavity length direction, a masking layer, which has been defined on the principal surface of the nitride semiconductor substrate and which has a striped opening in a selected area on the upper surface of the striped raised portion, and a nitride semiconductor multilayer structure, which has been grown on the selected area on the upper surface of the striped raised portion. The nitride semiconductor multilayer structure is thicker than nitride semiconductors on the masking layer, and the nitride semiconductor multilayer structure is broader in width than the striped opening of the masking layer and includes portions that have grown laterally onto the masking layer.