The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jan. 17, 2007
Applicants:
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Inventors:
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrateand a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate. The multilayer structure includes an active layerthat produces emission and multiple semiconductor layersandthat have been stacked one upon the other between the active layerand the substrateand that include an n-type dopant. Each and every one of the semiconductor layersandincludes Al atoms.