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Csmc Technologies Fab1 Co., Ltd.

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USPTO Granted Patents = 63

EPO Patents = 9

Forward Citations = 76

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71 inventors (with patents filed for the assignee):

Genyi Wang (13 out of 16 patents)

Xiaoshe Deng (12 out of 15 patents)

Qiang Rui (6 out of 8 patents)

4. Dongfei Zhou (6 out of 7 patents)

5. Shuo Zhang (5 out of 6 patents)

6. Shengrong Zhong (5 out of 6 patents)

7. Le Wang (5 out of 5 patents)

8. Meng Dai (4 out of 5 patents)

9. Zhongyu Lin (4 out of 5 patents)

10. Shu Zhang (4 out of 7 patents)

11. Errong Jing (3 out of 5 patents)

12. Xinwei Zhang (3 out of 5 patents)

13. Changfeng Xia (3 out of 6 patents)

14. Guangtao Han (3 out of 6 patents)

15. Yonghai Hu (3 out of 3 patents)

Core Competencies:

IGBT

MEMS

ESD Protection

Silicon Etching

Transistor

Power Management

MOSFET

Capacitor

Photolithography

Thin-Film

Diode

Microstructure

63 patents: Sort by Forward Citations

1. 10816903 - Photolithography method and system based on high step slope (2020-10-27),

2. 10301175 - Method for manufacturing MEMS double-layer suspension microstructure, and MEMS infrared detector (2019-05-28),

3. 10276430 - Silicon-on-insulator device and intermetallic dielectric layer structure thereof and manufacturing method (2019-04-30),

4. 10101225 - Pressure sensor with light detection of diaphragm protrusion (2018-10-16),

5. 10096699 - Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor (2018-10-09),

6. 10084073 - Lateral insulated-gate bipolar transistor and manufacturing method therefor (2018-09-25),

7. 10084036 - Insulated gate bipolar transistor and manufacturing method therefor (2018-09-25),

8. 10077188 - Manufacturing method of MEMS chip (2018-09-18),

9. 10062746 - Semiconductor rectifier and manufacturing method thereof (2018-08-28),

10. 10056867 - Sensor control circuit and electronic apparatus (2018-08-21),

11. 10019027 - Direct digital synthesizing method and direct digital synthesizer (2018-07-10),

12. 10003890 - MEMS microphone (2018-06-19),

13. 9960047 - Test pattern for trench poly over-etched step and formation method thereof (2018-05-01),

14. 9954431 - Starting circuit of power management chip, and power management chip (2018-04-24),

15. 9954074 - Insulated gate bipolar transistor and manufacturing method therefor (2018-04-24),

Company Overview

Csmc Technologies Fab1 Co., Ltd. is a prominent player in the semiconductor industry, headquartered in Jiangsu, China. The company specializes in the development and manufacturing of advanced semiconductor devices, focusing on technologies such as IGBT, MEMS, and ESD protection. Csmc Technologies is dedicated to innovation in power management solutions, including MOSFETs and capacitors, and employs cutting-edge silicon etching techniques to enhance device performance. Its expertise positions it as a key contributor to the evolving landscape of semiconductor technology.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 3 2026

63 Patents

#10 in Jiangsu

#516 in China

#11,634 in the World

Csmc Technologies Fab1 Co., Ltd.

Forward Citations = 76

71 inventors:

Genyi Wang (13 out of 16 patents)

Xiaoshe Deng (12 out of 15 patents)

Qiang Rui (6 out of 8 patents)

4. Dongfei Zhou (6 out of 7 patents)

5. Shuo Zhang (5 out of 6 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Csmc Technologies Fab1 Co., Ltd.. Retrieved from https://idiyas.com/company/csmc-technologies-fab1-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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