The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Sep. 28, 2015
Csmc Technologies Fab1 Co., Ltd., Wuxi New District, Jiangsu, CN;
Shukun Qi, Jiangsu, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Wuxi New District, Jiangsu, CN;
Abstract
Provided is a lateral insulated-gate bipolar transistor (LIGBT), comprising a substrate (), an anode terminal and a cathode terminal on the substrate (), and a drift region () and a gate () located between the anode terminal and the cathode terminal. The anode terminal comprises a P-type buried layer () on the substrate (), an N-type buffer region () on the P-type buried layer (), and a P+ collector region () on the surface of the N-type buffer region (). The LIGBT further comprises a trench gate adjacent to the anode terminal, wherein the trench gate penetrates from the surfaces of the N-type buffer region () and the P+ collector region () to the P-type buried layer (), and the trench gate comprises an oxidation layer () on the inner surface of a trench and polysilicon () filled into the oxidation layer.