Jiangsu, China

Shuo Zhang

This inventor holds 6 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: Csmc Technologies Fab1 Co., Ltd., Cmsc Technologies Fab1 Co., Ltd.. Active years: 2016-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuo Zhang. Retrieved from https://idiyas.com/inventor/shuo-zhang-ulzl5d6g

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Wuxi New District, CN (2017)
  • Jiangsu, CN (2016 - 2018)

Company Filing History:


Years Active: 2016-2018

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6 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Shuo Zhang**

Introduction

Shuo Zhang is a prominent inventor based in Jiangsu, China, known for his significant contributions to the field of semiconductor technology. With a total of six patents to his name, Zhang has focused his research on developing advanced transistor technologies, particularly the field-stop reverse conducting insulated gate bipolar transistor.

Latest Patents

Among his notable inventions, Zhang's latest patents include a groundbreaking design for a "Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor." This innovation presents a transistor that consists of an N-type underlayment with a back-surface P-type structure. Notably, it features a plurality of notches that extend through the back-surface P-type structure, facilitating a unique metal structure that extends into the electric field stop layer. Additionally, his patent for the "manufacturing method for reverse conducting insulated gate bipolar transistor" emphasizes utilizing polysilicon to fill grooves, allowing for simplified control over diode parameters by adjusting the doping concentration accurately.

Career Highlights

Shuo Zhang has built his professional experience by working with industry leaders such as CSMC Technologies Fab1 Co., Ltd. and CMSC Technologies Fab1 Co., Ltd. His work at these companies has equipped him with a robust understanding of manufacturing processes and semiconductor innovations.

Collaborations

Throughout his career, Zhang has collaborated with notable colleagues, including Qiang Rui and Genyi Wang. These collaborations have contributed to the exchange of ideas and advancements in their respective projects, fostering an environment of innovation and growth.

Conclusion

Shuo Zhang's inventive work and research in the field of electronic components position him as a significant player in the technology landscape. His patents, especially focused on the field-stop reverse conducting insulated gate bipolar transistor and its manufacturing methods, reflect his dedication to pushing the boundaries of innovation in semiconductors. With a promising career ahead, Zhang is likely to continue making impactful contributions to the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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