The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2017
Filed:
Jul. 29, 2014
Csmc Technologies Fab1 Co., Ltd., Wuxi New District, CN;
Xiaoshe Deng, Wuxi New District, CN;
Qiang Rui, Wuxi New District, CN;
Shuo Zhang, Wuxi New District, CN;
Genyi Wang, Wuxi New District, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Wuxi New District, CN;
Abstract
An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (); growing an oxide layer on the field-stop layer (); removing the oxide layer from the field-stop layer (); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.