The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jun. 06, 2014
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Shuo Zhang, Jiangsu, CN;
Qiang Rui, Jiangsu, CN;
Xiaoshe Deng, Jiangsu, CN;
Genyi Wang, Jiangsu, CN;
Abstract
A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure () and an active region (). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (), one surface of the electric field stop layer () departing from the underlayment is provided with a back-surface P-type structure (), and the surface of the back-surface P-type structure () is provided with a back-surface metal layer (). A plurality of polysilicon filling structures () which penetrate into the electric field stop layer () from the back-surface P-type structure () are formed in the active region ().