The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Jun. 09, 2014
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Xiaoshe Deng, Jiangsu, CN;
Shuo Zhang, Jiangsu, CN;
Qiang Rui, Jiangsu, CN;
Genyi Wang, Jiangsu, CN;
CSMC TECHNOLOGIES FAB1 CO., LTD., Jiangsu, CN;
Abstract
An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided. The IGBT comprises: a semiconductor substrate () of the first conduction type which has a first major surface (S) and a second major surface (S), wherein the semiconductor substrate () comprises an active region () and a terminal protection area () which is located at the outer side of the active region; an insulated gate transistor unit which is formed at the side of the first major surface (S) of the active region (), wherein a channel of the first conduction type is formed thereon during the conduction thereof; and first semiconductor layers () of the first conduction type and second semiconductor layers () of the second conduction type of the active region, which are formed at the side of the second major surface (S) of the semiconductor substrate () alternately, wherein the IGBT only comprises the second semiconductor layers () in the terminal protection area () which is located at the side of the second major surface (S) of the semiconductor substrate ().