The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Jul. 25, 2013
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Qiang Rui, Jiangsu, CN;
Shuo Zhang, Jiangsu, CN;
Genyi Wang, Jiangsu, CN;
Xiaoshe Deng, Jiangsu, CN;
CMSC TECHNOLOGIES FAB1 CO., LTD., Jiangsu, CN;
Abstract
Disclosed is a method for removing a polysilicon protection layer () on a back face of an IGBT having a field stop structure (). The method comprises thermally oxidizing the polysilicon protection layer () on the back face of the IGBT until the oxidation is terminated on a gate oxide layer () located above the polysilicon protection layer () to form a silicon dioxide layer (), and removing the formed silicon dioxide layer () and the gate oxide layer () by a dry etching process. The method for removing the protection layer is easier to control.