The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jan. 13, 2017
Applicant:
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Inventors:
Dan Dai, Jiangsu, CN;
Xinwei Zhang, Jiangsu, CN;
Guoping Zhou, Jiangsu, CN;
Changfeng Xia, Jiangsu, CN;
Assignee:
CSMC TECHNOLOGIES FAB1 CO., LTD., Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00825 (2013.01); B81C 2201/0167 (2013.01); B81C 2201/053 (2013.01);
Abstract
A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiOon the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.