The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Jun. 07, 2012
Applicant:
Zheng Bian, Jiangsu, CN;
Inventor:
Zheng Bian, Jiangsu, CN;
Assignees:
CSMC Technologies Fab1 Co., Ltd., Jiangsu, CN;
CSMC Technologies Fab2 Co., Ltd., Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 22/12 (2013.01); H01L 22/30 (2013.01);
Abstract
A test pattern for testing a trench POLY over-etched step is provided. The test pattern is a trench () formed on a substrate (); the trench () comprises a bottom surface and two side surfaces extending from the bottom surface; the trench () is formed on the substrate () with a preset angle of non-90° formed between the longitudinal direction (L) thereof and the longitudinal direction (X) of a wafer scribing trench. The test pattern can extend the scanning length of a step scanning equipment without changing the width of the trench.