Insulated gate bipolar transistor and manufacturing method therefor

Abstract

An insulated gate bipolar transistor and a manufacturing method therefor. The insulated gate bipolar transistor comprises a semiconductor substrate () of a first conductive type, which is provided with a first major surface (S) and a second major surface (S), wherein the semiconductor substrate () comprises a primitive cell area () and a terminal protection area () which is located outside the primitive cell area; a first semiconductor layer () of a first conductive type which is formed at the side of the first major surface of the semiconductor substrate (), wherein the doping concentration of the first semiconductor layer () is higher than the doping concentration of the semiconductor substrate (); and an insulated gate transistor unit which is formed at the side of the first major surface of the first semiconductor layer () in the primitive cell area, wherein the insulated gate transistor unit is conducted, a channel of a first conductive type is formed. Compared with the prior art, the present invention not only can improve the voltage resistance reliability of the insulted gate bipolar transistor, but also can reduce the forward conductive voltage drop of the insulated gate bipolar transistor.