Shengrong Zhong

Title: Innovations of Shengrong Zhong in Semiconductor Technology

Introduction

Shengrong Zhong is a prominent inventor based in Wuxi New District, China. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is for an insulated gate bipolar transistor and its manufacturing method. This invention provides a substrate of N-type material with a P-type region on its back. The design includes a terminal protection ring and a polysilicon gate on the substrate's front surface. The innovation aims to increase carrier concentration and reduce forward voltage drop, thereby improving device performance.

Another notable patent is for a semiconductor rectifying device. This device features a substrate of a first conductivity type and an epitaxial layer that defines multiple trenches. The filling structure consists of insulating and conductive materials, enhancing the device's efficiency. The manufacturing method involves forming an epitaxial layer and creating a doped region between the filling structures.

Career Highlights

Shengrong Zhong has worked with CSMC Technologies Fab1 Co., Ltd. and CSMC Technologies Fab2 Co., Ltd., where he has applied his expertise in semiconductor technology. His contributions have been instrumental in advancing the capabilities of the companies he has been associated with.

Collaborations

He has collaborated with notable coworkers, including Xiaoshe Deng and Dongfei Zhou, further enriching his experience and contributions to the field.

Conclusion

Shengrong Zhong's innovations in semiconductor technology demonstrate his commitment to advancing the industry. His patents reflect a deep understanding of device performance and manufacturing methods, making him a valuable figure in the field.