Method for manufacturing insulated gate bipolar transistor

Abstract

A method for manufacturing an insulated gate bipolar transistor () comprises: providing a substrate (), forming a field oxide layer () on a front surface of the substrate (), and forming a terminal protection ring (); performing photoetching and etching on the active region field oxide layer () by using an active region photomask, introducing N-type ions into the substrate () by using a photoresist as a mask film; depositing and forming a polysilicon gate () on the etched substrate () of the field oxide layer (), and forming a protection layer on the polysilicon gate (); performing junction pushing on an introduction region of the N-type ions, and then forming a carrier enhancement region (); performing photoetching by using a P well photomask, introducing P-type ions into the carrier enhancement region (), and performing junction pushing and then forming a P-body region; performing, by means of the polysilicon gate, self-alignment introduction of N-type ions into the P-body region, and performing junction pushing and then forming an N-type heavily doped region; forming sidewalls on two sides of the polysilicon gate, introducing P-type ions into the N-type heavily doped region, and performing junction pushing and then forming a P-type heavily doped region; and removing the protection layer, and then performing introduction and doping of the polysilicon gate. The method reduces a forward voltage drop disposing the carrier enhancement region.