Location History:
- Wuxi, CN (2014 - 2017)
- Jiangsu, CN (2015 - 2019)
Company Filing History:
4 out of 62 
2 out of 139 Years Active: 2014-2019
Title: Innovations of Zhongyu Lin
Introduction
Zhongyu Lin is a prominent inventor based in Wuxi, China. He has made significant contributions to the field of electrostatic protection devices, holding a total of 5 patents. His work focuses on enhancing the reliability and performance of electronic components through innovative designs.
Latest Patents
Zhongyu Lin's latest patents include an "Electrostatic protection device of LDMOS silicon controlled structure." This invention features a P-type substrate, an N-well, and a P-well, with a gate electrode overlapping on the P-well. The design incorporates various N+ and P+ structures to improve electrostatic discharge protection. Another notable patent is the "Electrostatic discharge protection structure and fabrication method thereof." This patent outlines a comprehensive structure that includes substrate and well regions, counter-doped regions, and an oxide layer with a field plate structure, all aimed at enhancing electrostatic discharge protection.
Career Highlights
Zhongyu Lin has worked with notable companies such as CSMC Technologies Fab1 Co., Ltd. and CSMC Technologies Fab2 Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Throughout his career, Zhongyu Lin has collaborated with talented individuals, including Meng Dai and Guangyang Wang. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Zhongyu Lin's contributions to the field of electrostatic protection devices demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of semiconductor technology and its applications in modern electronics.