The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 05, 2011
Applicants:
Meng Dai, Wuxi, CN;
Zhongyu Lin, Wuxi, CN;
Inventors:
Meng Dai, Wuxi, CN;
Zhongyu Lin, Wuxi, CN;
Assignees:
CSMC Technologies Fab1 Co., Ltd., Wuxi, CN;
CSMC Technologies FAB2 Co., Ltd., Wuxi, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/87 (2006.01); H01L 29/749 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 27/0262 (2013.01); H01L 29/87 (2013.01); H01L 29/749 (2013.01); H01L 29/1016 (2013.01);
Abstract
An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.