The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2017

Filed:

Feb. 28, 2016
Applicant:

Csmc Technologies Fab1 Co., Ltd., Wuxi, Jiangsu, CN;

Inventors:

Yonghai Hu, Wuxi, CN;

Meng Dai, Wuxi, CN;

Zhongyu Lin, Wuxi, CN;

Guangyang Wang, Wuxi, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/87 (2006.01); H01L 21/762 (2006.01); H01L 21/8232 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/3205 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/0223 (2013.01); H01L 21/26513 (2013.01); H01L 21/32055 (2013.01); H01L 21/76202 (2013.01); H01L 21/76224 (2013.01); H01L 21/8232 (2013.01); H01L 27/0248 (2013.01); H01L 29/402 (2013.01); H01L 29/66121 (2013.01); H01L 29/87 (2013.01); H01L 21/02255 (2013.01);
Abstract

An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.


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