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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Zhigang Wang

This inventor holds 93 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Non-Volatile Memory (CPC class G11C1-604). Top assignees: Advanced Micro Devices Corporation, Actel Corporation, Inc., Spansion LLC.. Active years: 2002-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhigang Wang. Retrieved from https://idiyas.com/inventor/zhigang-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 93 

% Patents Active = 73.1

 

Average Co-Inventor Count = 3.2

ph-index = 16

Forward Citations = 1,474(Granted Patents)

Forward Citations (Not Self Cited) = 1,420(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • San Jose, CA (US) (2002 - 2005)
  • Santa Clara, CA (US) (2003 - 2008)
  • Sunnyvale, CA (US) (2004 - 2018)
  • Fremont, CA (US) (2016 - 2023)

Company Filing History:

goldMedal45 out of 13,168 
 
Advanced Micro Devices Corporation
 patents
silverMedal17 out of 463 
 
Actel Corporation, Inc.
 patents
bronzeMedal11 out of 1,075 
 
Spansion LLC.
 patents
4. 7 out of 7 
 
Zhuhai Chuangfeixin Technology Co., Ltd.
 patents
5. 4 out of 55 
 
Syntest Technologies, Inc.
 patents
6. 3 out of 108 
 
Thin Film Electronics Asa
 patents
7. 2 out of 78 
 
Kovio, Inc.
 patents
8. 2 out of 16 
 
Vivalnk, Inc.
 patents
9. 1 out of 1 
 
Gallop Creation USA Inc.
 patent
10. 1 out of 3 
 
Vivalnk Limited (Cayman Islands)
 patents

Years Active: 2002-2023

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Areas of Expertise:
Antifuse Structures
Low-Voltage Devices
Humidity Detection
Thin-Film Transistor
Wearable Patch
Tunable Capacitors
FPGA Memory Cells
Printed Electronics
Logic Cell Layout
Memory Array
Radiation-Tolerant
Electrical Signals
93 patents (USPTO):Explore Patents
1. 11690218 - Antifuse OTP structures with hybrid low-voltage devices (2023-06-27),
2. 11417668 - Antifuse OTP structures with hybrid low-voltage devices (2022-08-16),
3. 11296096 - Antifuse OTP structure with hybrid junctions (2022-04-05),
4. 11217595 - Antifuse OTP structure with hybrid device and hybrid junction for select transistor (2022-01-04),
5. 11158641 - Antifuse OTP structures with hybrid devices and hybrid junctions (2021-10-26),
6. 11018143 - Antifuse OTP structures with hybrid low-voltage devices (2021-05-25),
7. 10441478 - Humidity detection device for smart diaper (2019-10-15),
8. 10128184 - Antifuse structure in via hole in interplayer dielectric (2018-11-13),
9. 9985664 - Random delay generation for thin-film transistor based circuits (2018-05-29),
10. 9861289 - Compliant wearable patch capable of measuring electrical signals (2018-01-09),
11. 9560975 - Three dimensional electronic patch (2017-02-07),
12. 9483726 - Three dimensional electronic patch (2016-11-01),
13. 9155202 - Print compatible designs and layout schemes for printed electronics (2015-10-06),
14. 8896048 - Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors (2014-11-25),
15. 8810298 - Random delay generation for thin-film transistor based circuits (2014-08-19),

Title: Innovations by Zhigang Wang: Pioneering Antifuse OTP Structures

Introduction

Zhigang Wang is a renowned inventor located in Sunnyvale, CA, with an impressive portfolio of 93 patents. He is recognized for his significant contributions to the fields of semiconductor technology and memory devices, particularly in the development of innovative antifuse One-Time-Programmable (OTP) memory cell structures. His advancements reflect the dedication and creativity that have shaped modern electronics.

Latest Patents

Among his latest patents, Zhigang Wang has developed antifuse OTP structures that integrate hybrid low-voltage devices. These memory cells consist of a substrate, a hybrid select transistor, and a hybrid antifuse capacitor. Notably, the hybrid select transistor features a first gate dielectric layer, which is thinner than 40 nm, combined with a first high-voltage junction and a low-voltage junction within the substrate. The hybrid antifuse capacitor also includes a second gate dielectric layer of similar thickness, enabling the creation of a low-voltage antifuse capacitor device. This innovation enhances the efficiency and functionality of memory cells, pushing the boundaries of current technology.

Career Highlights

Zhigang Wang has had a remarkable career, having worked for notable companies such as Advanced Micro Devices Corporation and Actel Corporation, Inc. His experience in these organizations has provided him with the platform to innovate and develop key technologies in the semiconductor sector.

Collaborations

Throughout his career, Wang has collaborated with esteemed professionals in the industry, including Nian Niles Yang and Fethi Dhaoui. These collaborations have allowed for the exchange of ideas and expertise, further enriching his research and developments in memory technology.

Conclusion

Zhigang Wang's contributions to the field of semiconductor memory technologies are not only impressive due to the number of patents he holds but also for the impactful innovations he has introduced. His latest inventions, particularly in the area of antifuse OTP structures, demonstrate a forward-thinking approach to enhancing memory device efficiency. As technology continues to evolve, inventors like Wang play a crucial role in shaping the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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