The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jan. 15, 2020
Zhuhai Chuangfeixin Technology Co., Ltd., Zhuhai, CN;
Li Li, Femont, CA (US);
Zhigang Wang, Fremont, CA (US);
Zhuhai Chuangfeixin Technology Co., Ltd., Zhuhai, CN;
Abstract
An antifuse One-Time-Programmable memory cell includes a substrate, a select transistor formed on the substrate, and an antifuse capacitor formed on the substrate. The select transistor includes a first gate dielectric layer formed on the substrate, a first gate formed on the gate dielectric layer, a first low-voltage junction formed in the substrate, and a second low-voltage junction formed in the substrate. A source and a drain for the select transistor are formed by the first low-voltage junction and the second low-voltage junction. The antifuse capacitor includes a second gate dielectric layer formed on the substrate, a second gate formed on the gate dielectric layer, a third low-voltage junction formed in the substrate, and a fourth low-voltage junction formed in the substrate. A source and a drain for the antifuse capacitor are respectively formed by the third low-voltage junction and the fourth low-voltage junction.