The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Nov. 08, 2019
Applicant:
Zhuhai Chuangfeixin Technology Co., Ltd., Zhuhai, CH;
Inventors:
Li Li, Femont, CA (US);
Zhigang Wang, Fremont, CA (US);
Assignee:
Zhuhai Chuangfeixin Technology Co., Ltd., Zhuhai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 23/535 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/535 (2013.01); H01L 23/5252 (2013.01);
Abstract
An antifuse One-Time-Programmable memory cell includes a substrate, a select transistor, and an antifuse capacitor. The select transistor includes a first high-voltage junction formed in the substrate and a first low-voltage junction formed in the substrate. The antifuse capacitor includes a second high-voltage junction formed in the substrate and a second low-voltage junction formed in the substrate.