The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Apr. 01, 2016
Applicant:

Zhuhai Chuangfeixin Technology Co., Ltd., ZhuHai, Guang Dong Province, CN;

Inventors:

Li Li, Fremont, CA (US);

Zhigang Wang, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01); G11C 17/16 (2006.01); H01L 21/3105 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5252 (2013.01); G11C 17/165 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/7684 (2013.01); H01L 21/76819 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76847 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 23/53219 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53261 (2013.01);
Abstract

An antifuse structure includes a first electrode layer, an inter-metal dielectric layer over the first electrode layer, and a via in the inter-metal dielectric layer. The via penetrates through the inter-metal dielectric layer exposing a portion of the first electrode layer. An antifuse layer is deposited in the via and over the portion of the first electrode layer. A second electrode is disposed in the via and over the antifuse layer. An interconnect layer may be deposited over the inter-metal dielectric layer and in electrical contact with the second electrode in the via.


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