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For the Inventor, By the Inventor

Hefei, China

Yong Lu

This inventor holds 19 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Semiconductor Manufacturing. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong Lu. Retrieved from https://idiyas.com/inventor/yong-lu-2cdrfpi4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.1

ph-index = 1


Company Filing History:

goldMedal19 out of 1,856 
 
Changxin Memory Technologies, Inc.
 patents

Years Active: 2023-2025

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Areas of Expertise:
Semiconductor Structure
Manufacturing Method
Capacitor Structure
Buried Word Line
Memory Fabrication
High Aspect Ratio
Double-Sided Capacitor
Bit Line Structure
Dielectric Layers
19 patents (USPTO):Explore Patents
1. 12432903 - Semiconductor structure and method for fabricating same (2025-09-30),
2. 12376290 - Semiconductor structure having buried word line structure with dielectric layers of different dielectric constants, and manufacturing method thereof (2025-07-29),
3. 12356607 - Semiconductor structure and manufacturing method thereof (2025-07-08),
4. 12284800 - Semiconductor structure and method for manufacturing semiconductor structure (2025-04-21),
5. 12283516 - Semiconductor device and method for manufacturing the same (2025-04-21),
6. 12266683 - Capacitor structure and method of manufacturing same, and memory (2025-04-01),
7. 12224323 - Fabrication method of buried wordline structure (2025-02-11),
8. 12213309 - Semiconductor device and manufacturing method thereof (2025-01-28),
9. 12148654 - Semiconductor structure including a trench having a high aspect ratio formed by etching and its manufacturing method as applied to formation of a capacitor in the semiconductor structure (2024-11-19),
10. 12114478 - Semiconductor structure and method for preparing same (2024-10-08),
11. 11984472 - Double-sided capacitor structure and method for forming the same (2024-05-14),
12. 11980020 - Semiconductor structure and forming method thereof (2024-05-07),
13. 11935925 - Method for manufacturing semiconductor structure and semiconductor structure (2024-03-19),
14. 11916102 - Double-sided capacitor structures and forming methods thereof (2024-02-27),
15. 11894419 - Double-sided capacitor and fabrication method thereof (2024-02-06),

Title: Yong Lu: Innovator in Semiconductor Technology

Introduction

Yong Lu is a prominent inventor based in Hefei, China, known for his significant contributions to semiconductor technology. With a total of 19 patents to his name, he has made remarkable advancements in the field, particularly in the design and fabrication of semiconductor structures.

Latest Patents

Among his latest patents, Yong Lu has developed a semiconductor structure and a method for fabricating the same. This invention includes a substrate with a trench, a conductive layer positioned within the trench, and a dielectric layer that enhances the performance of the semiconductor. Another notable patent involves a semiconductor structure featuring a buried word line structure with dielectric layers of varying dielectric constants, which improves the efficiency of semiconductor devices.

Career Highlights

Yong Lu is currently employed at Changxin Memory Technologies, Inc., where he continues to innovate and push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory technologies, making significant impacts in the industry.

Collaborations

Yong Lu has collaborated with notable colleagues such as Gongyi Wu and Hongkun Shen, contributing to various projects that enhance semiconductor design and manufacturing processes.

Conclusion

Yong Lu's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory technologies and semiconductor structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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