The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Aug. 21, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Yong Lu, Hefei, CN;
Hongkun Shen, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); G11C 5/06 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); G11C 5/063 (2013.01); H01L 21/76232 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H10B 12/488 (2023.02);
Abstract
A buried wordline structure fabrication method includes: providing a first trench in a semiconductor substrate, wherein the first trench has a tip on its bottom; performing epitaxial growth within the first trench to reduce the depth of the tip on the bottom of the first trench; and forming a gate dielectric layer on an inner wall of the first trench and filling a gate conductive layer within the first trench to form the buried wordline structure.