The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Aug. 16, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Gongyi Wu, Hefei, CN;

Yong Lu, Hefei, CN;

Longyang Chen, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2024.12); H10B 12/00 (2022.12); H10D 64/27 (2024.12); H10D 62/17 (2024.12);
U.S. Cl.
CPC ...
H10B 12/34 (2023.01); H10B 12/053 (2023.01); H10B 12/488 (2023.01); H10D 64/513 (2024.12); H10D 62/102 (2024.12); H10D 62/112 (2024.12); H10D 62/235 (2024.12); H10D 62/292 (2024.12);
Abstract

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a substrate, a trench and a word line. The substrate includes an isolation structure and an active area. The active area includes irons of a first type. The trench is arranged in the active area, an inner surface of the trench includes an inversion doping layer and an oxide layer which are arranged adjacent to each other, and the inversion doping layer is arranged above the oxide layer. The word line is arranged in the trench. The inversion doping layer includes ions of a second type. The first type is contrary to the second type.


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