Double-sided capacitor structures and forming methods thereof

Abstract

A method for forming a double-sided capacitor structure includes: providing a base, the base including a substrate, a plurality of capacitor contacts located in the substrate, a stack structure located on a surface of the substrate and a plurality of capacitor holes running through the stack structure and exposing the capacitor contacts, the stack structure including sacrificial layers and support layers which are stacked alternately; successively forming a first electrode layer, a first dielectric layer and a second electrode layer on inner walls of the capacitor holes; forming a first conductive filling layer in the capacitor holes; forming an auxiliary layer for sealing the capacitor holes; removing a part of the auxiliary layers and several of the support layers and the sacrificial layers to expose the first electrode layer; and, forming a second dielectric layer and a third electrode layer.