The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Oct. 18, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Yong Lu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present application relates to a fabrication method for a double-sided capacitor. The fabrication method for the double-sided capacitor includes the following steps: providing a substrate; forming a stack structure on the substrate; forming a capacitor hole in a direction perpendicular to the substrate to penetrate the stack structure, wherein the stack structure includes sacrificial layers and supporting layers alternately stacked; forming an auxiliary layer to cover the sidewall of the capacitor hole; forming a first electrode layer to cover the surface of the auxiliary layer; removing a part of the supporting layer on the top of the stack structure; removing the sacrificial layers and the auxiliary layer simultaneously along the opening; and forming a dielectric layer covering the surface of the first electrode layer and a second electrode layer covering the surface of the dielectric layer, wherein the gap is at least filled with the dielectric layer.