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For the Inventor, By the Inventor

Hsinchu, Taiwan

Ying-Ru Shih

This inventor holds 24 USPTO granted patents and 9 published patent applications, primarily in Epitaxial Structures. Top assignees: Globalwafers Co., Ltd., Sino-American Silicon Products Inc., Globalwafers Co., Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying-Ru Shih. Retrieved from https://idiyas.com/inventor/ying-ru-shih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 91.7

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Hsinchu Science Park, TW (2018)
  • Hsinchu, TW (2017 - 2024)

Company Filing History:

goldMedal21 out of 315 
 
Globalwafers Co., Ltd.
 patents
silverMedal2 out of 33 
 
Sino-American Silicon Products Inc.
 patents
bronzeMedal1 out of 28 
 
Globalwafers Co., Ltd.
 patents

Years Active: 2017-2026

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Areas of Expertise:
Epitaxial Structure
Semiconductor Device
Wafer Grinding
Epitaxy Substrate
Diffusion Barrier Layer
III-Nitride Epitaxy
Nanostructured Chip
Bonding Wafer
Wafer Carrier
Crucible Structure
Manufacturing Method
Super-Lattice Laminates
24 patents (USPTO):Explore Patents
1. 12703062 - Wafer grinding parameter optimization method and electronic device (2026-08-11),
2. 12484269 - Semiconductor structure (2025-11-25),
3. 12281411 - Epitaxial structure (2025-04-21),
4. 12224322 - Epitaxial structure having diffusion barrier layer (2025-02-11),
5. 12051724 - Semiconductor epitaxy structure (2024-07-30),
6. 11923454 - Epitaxial structure having super-lattice laminates (2024-03-05),
7. 11757003 - Bonding wafer structure and method of manufacturing the same (2023-09-12),
8. 11688628 - Method of manufacturing epitaxy substrate (2023-06-27),
9. 11588015 - Epitaxial structure (2023-02-21),
10. 11588014 - Epitaxial structure (2023-02-21),
11. 11538681 - Epitaxy substrate and method of manufacturing the same (2022-12-27),
12. 11534794 - Crucible structure and method for forming isolating layer of crucible (2022-12-27),
13. 11532700 - Epitaxial structure (2022-12-20),
14. 11456362 - Epitaxial structure and semiconductor device (2022-09-27),
15. 11335780 - Epitaxial structure (2022-05-17),

Title: Inventor Ying-Ru Shih: Revolutionizing Technology in Hsinchu

Introduction: Ying-Ru Shih is a pioneering inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shih holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Shih has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the world of technology.

Collaborations: Throughout his career, Shih has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Ying-Ru Shih's relentless pursuit of innovation and his passion for creating cutting-edge technologies have solidified his reputation as a visionary inventor in Hsinchu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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