The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Apr. 23, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GLOBALWAFERS CO., LTD., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01);
Abstract
An epitaxial structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a diffusion barrier layer, and a P-type gallium nitride layer sequentially stacked from bottom to top. The P-type gallium nitride layer has a first lattice constant. The diffusion barrier layer includes a chemical composition of InAlGaN, where x1+y1+z1=1, 0≤x1≤0.3, 0≤y1≤1.0, and 0≤z1≤1.0. The chemical composition of the diffusion barrier layer has a proportional relationship so that the diffusion barrier layer has a second lattice constant that matches the first lattice constant, and the second lattice constant is between 80% and 120% of the first lattice constant.