The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
May. 26, 2020
Globalwafers Co., Ltd., Hsinchu, TW;
Jia-Zhe Liu, Hsinchu, TW;
Ying-Ru Shih, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
An epitaxial structure includes a substrate, a buffer layer, a back diffusion barrier layer, a channel layer formed on the back diffusion barrier layer, and a barrier layer formed on the channel layer. The buffer layer is formed on the substrate. The back diffusion barrier layer is formed on the buffer layer. The chemical composition of the back diffusion barrier layer is AlInGaN, wherein 0≤x≤1 and 0≤y≤1. The lattice constant of the back diffusion barrier layer is between 2.9 Å and 3.5 Å. The back diffusion barrier layer is composed of a plurality of regions in the thickness direction, and the aluminum (Al) content and the indium (In) content of the back diffusion barrier layer are changed stepwise or gradually changed stepwise along the thickness direction. The back diffusion barrier layer further includes carbon, and the carbon concentration is changed stepwise or gradually changed stepwise along the thickness direction.