Globalwafers Co., Ltd.

Sino-american Silicon Products Inc.

Ying-Ru Shih

Jia-Zhe Liu

Wen-Ching Hsu

Yen-Lun Huang

Chih-Yuan Chuang

Chun-I Fan

Tzu-Yao Lin

Yu-Min Yang

Sung-Lin Hsu

Bo-Kai Wang

Chien-Jen Sun

Chi-Tse Lee

Jer-Liang Andrew Yeh

Te-Hao Lee

Wen-Huai Yu

Cheng-Jui Yang

Yuan-Hsiao Chang

Yuan-Hao Chang

Chenghan Tsao

Po Jung Lin

Hsien-Chin Chiu

Huang-Wei Lin

Hung-Chang Lo

Wei Li Wu

Ching-Hung Weng

Wei-jie Sie

A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided. The first nitride layer is located on the substrate. The polarity inversion layer is located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface. The second nitride layer is located on the polarity inversion layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer include iron element.

Semiconductor structure

An epitaxial structure including at least a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, and a P-type aluminum indium gallium nitride layer is provided. The nucleation layer is formed on the substrate; the buffer layer is formed on the nucleation layer; the channel layer is formed on the buffer layer; the barrier layer is formed on the channel layer; and the P-type aluminum indium gallium nitride layer is formed on the barrier layer. The material of the P-type aluminum indium gallium nitride layer is AlInGaN with a P-type dopant, in which the contents of Al, In and Ga all change stepped-periodically or stepped-periodical-gradually in the thickness direction, and the doping concentration of the P-type dopant changes stepped-periodically or stepped-periodical-gradually in the thickness direction.

Epitaxial structure

An epitaxial structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a diffusion barrier layer, and a P-type gallium nitride layer sequentially stacked from bottom to top. The P-type gallium nitride layer has a first lattice constant. The diffusion barrier layer includes a chemical composition of InAlGaN, where x1+y1+z1=1, 0≤x1≤0.3, 0≤y1≤1.0, and 0≤z1≤1.0. The chemical composition of the diffusion barrier layer has a proportional relationship so that the diffusion barrier layer has a second lattice constant that matches the first lattice constant, and the second lattice constant is between 80% and 120% of the first lattice constant.

Epitaxial structure having diffusion barrier layer

A semiconductor epitaxy structure includes a silicon carbide substrate, a nucleation layer, a gallium nitride buffer layer, and a stacked structure. The nucleation layer is formed on the silicon carbide substrate, the gallium nitride buffer layer is disposed on the nucleation layer, and the stacked structure is formed between the nucleation layer and the gallium nitride buffer layer. The stacked structure includes: a plurality of silicon nitride (SiN) layers and a plurality of aluminum gallium nitride (AlGaN) layers alternately stacked, wherein the first layer of the plurality of silicon nitride layers is in direct contact with the nucleation layer.

Semiconductor epitaxy structure

An epitaxial structure includes a substrate, a lower super-lattice laminate, a middle super-lattice laminate, an upper super-lattice laminate and a channel layer. The lower super-lattice laminate includes a plurality of first lower film layers and a plurality of second lower film layers stacked alternately. The first lower film layer includes aluminum nitride. The second lower film layer includes aluminum gallium nitride. The middle super-lattice laminate includes a plurality of first middle film layers and a plurality of second middle film layers stacked alternately. The first middle film layer includes aluminum nitride. The second middle film layer includes gallium nitride doped with a doping material. The upper super-lattice laminate includes a plurality of first upper film layers and a plurality of second upper film layers stacked alternately. The first upper film layer includes gallium nitride doped with the doping material. The second upper film layer includes gallium nitride.

Epitaxial structure having super-lattice laminates

A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded onto the bonding layer, in which a carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer has a basal plane dislocation (BPD) of 1,000 ea/cmto 20,000 ea/cm, a total thickness variation (TTV) greater than that of the support substrate, and a diameter equal to or less than that of the support substrate. The bonding wafer structure has a TTV of less than 10 &#x3bc;m, a bow of less than 30 &#x3bc;m, and a warp of less than 60 &#x3bc;m.

Bonding wafer structure and method of manufacturing the same

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 &#x3bc;m and less than 200 &#x3bc;m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90&#xb0; is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 &#x3bc;m and 800 &#x3bc;m.

Method of manufacturing epitaxy substrate

An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is AlInN, where 0&#x2264;x&#x2264;1. A maximum value of the x value in the regions decreases along the thickness direction, and the x value in the chemical composition of each two regions consists of a fixed region and a gradient region, wherein a gradient slope of the gradient regions is &#x2212;0.1%/nm to &#x2212;50%/nm, and a stepwise slope of the fixed regions is &#x2212;0.1%/loop to &#x2212;50%/loop. A thickness of the nucleation layer is less than that of the buffer layer. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.

An epitaxial structure includes a substrate, a nucleation layer on the substrate, a buffer layer on the nucleation layer, and a nitride layer on the buffer layer. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is AlInN, where 0&#x2264;x&#x2264;1. A maximum value of the x value in the plurality of regions is the same, a minimum value of the x value in the plurality of regions is the same, and an absolute value of a gradient slope of each of the regions is 0.1%/nm to 50%/nm. A thickness of the nucleation layer is less than a thickness of the buffer layer. A roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.

A method for forming an isolating layer of a crucible includes placing a round crucible sideways with a bottom surface of an inside thereof perpendicular to a horizontal plane, and then performing a plurality of spraying processes to form the isolating layer on the bottom surface and a wall surface of the round crucible. Each spraying process includes spraying a slurry on the bottom surface; using an optical positioner to set a spraying range the same as one of a plurality of partial areas divided from the wall surface; aligning one of the plurality of partial areas with the spraying range; fixing the round crucible and spraying the slurry in the spraying range; stopping the spraying; and rotating the round crucible to move another partial area to the spraying range. Then, the steps are repeated until the spraying of all the partial areas is completed.

Crucible structure and method for forming isolating layer of crucible

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (&#x212b;) and 500 angstroms.

Epitaxy substrate and method of manufacturing the same

An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly. The nucleation layer consists of regions in a thickness direction, wherein a chemical composition of the regions is AlInN, where 0&#x2264;x&#x2264;1. The x value consists of four sections of variation along the thickness direction, in which a first fixed region has a maximum value, a first gradient region gradually changes from the maximum value to a minimum value, a second fixed region has the minimum value, and a second gradient region gradually changes from the minimum value to the maximum value. An absolute value of a gradient slope of the first and second gradient regions is 0.1%/nm to 50%/nm. A surface roughness of the nucleation layer in contact with the buffer layer is greater than that of the buffer layer in contact with the nitride layer.

An epitaxial structure and a semiconductor device are provided in which the epitaxial structure includes at least a SiC substrate, a nucleation layer, and a GaN layer. The nucleation layer is formed on the SiC substrate. The material of the nucleation layer is aluminum gallium nitride doped with a dopant, the Al content in the nucleation layer changes from high to low in the thickness direction, the lattice constant of the nucleation layer is between 3.08 &#x212b; and 3.21 &#x212b;, and the doping concentration of the nucleation layer changes from high to low in the thickness direction. The GaN layer is formed on the nucleation layer.

Epitaxial structure and semiconductor device

An epitaxial structure includes a substrate, a buffer layer, a back diffusion barrier layer, a channel layer formed on the back diffusion barrier layer, and a barrier layer formed on the channel layer. The buffer layer is formed on the substrate. The back diffusion barrier layer is formed on the buffer layer. The chemical composition of the back diffusion barrier layer is AlInGaN, wherein 0&#x2264;x&#x2264;1 and 0&#x2264;y&#x2264;1. The lattice constant of the back diffusion barrier layer is between 2.9 &#x212b; and 3.5 &#x212b;. The back diffusion barrier layer is composed of a plurality of regions in the thickness direction, and the aluminum (Al) content and the indium (In) content of the back diffusion barrier layer are changed stepwise or gradually changed stepwise along the thickness direction. The back diffusion barrier layer further includes carbon, and the carbon concentration is changed stepwise or gradually changed stepwise along the thickness direction.

An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer. The nucleation layer is disposed on the substrate, and the nucleation layer consists of a plurality of regions in a thickness direction, wherein a chemical composition of the region is AlInN, where 0&#x2264;x&#x2264;1. The buffer layer is disposed on the nucleation layer, and a thickness of the nucleation layer is less than a thickness of the buffer layer. The nitride layer is disposed on the buffer layer, wherein a roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.

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Hsinchu, Taiwan

Ying-Ru Shih