The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jul. 07, 2021
Globalwafers Co., Ltd., Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A bonding wafer structure includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on a surface of the support substrate, and the SiC layer is bonded onto the bonding layer, in which a carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer has a basal plane dislocation (BPD) of 1,000 ea/cmto 20,000 ea/cm, a total thickness variation (TTV) greater than that of the support substrate, and a diameter equal to or less than that of the support substrate. The bonding wafer structure has a TTV of less than 10 μm, a bow of less than 30 μm, and a warp of less than 60 μm.