Company Filing History:
Years Active: 2023
Title: Innovations of Hung-Chang Lo in Wafer Technology
Introduction
Hung-Chang Lo is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of bonding wafer structures. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this specialized area.
Latest Patents
Hung-Chang Lo holds a patent for a bonding wafer structure and method of manufacturing the same. This patent describes a bonding wafer structure that includes a support substrate, a bonding layer, and a silicon carbide (SiC) layer. The bonding layer is formed on the surface of the support substrate, while the SiC layer is bonded onto the bonding layer, ensuring that the carbon surface of the SiC layer is in direct contact with the bonding layer. The SiC layer features a basal plane dislocation (BPD) ranging from 1,000 ea/cm to 20,000 ea/cm, with a total thickness variation (TTV) greater than that of the support substrate. The bonding wafer structure boasts a TTV of less than 10 μm, a bow of less than 30 μm, and a warp of less than 60 μm.
Career Highlights
Hung-Chang Lo is currently employed at GlobalWafers Co., Ltd., where he continues to advance his research and development efforts in wafer technology. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.
Collaborations
Hung-Chang Lo collaborates with talented colleagues, including Ying-Ru Shih and Wei Li Wu. Their combined expertise contributes to the innovative projects at GlobalWafers Co., Ltd.
Conclusion
Hung-Chang Lo's contributions to wafer technology exemplify the spirit of innovation in the semiconductor industry. His patent and ongoing work at GlobalWafers Co., Ltd. highlight his commitment to advancing technology in this critical field.