The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Jul. 16, 2019
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Ying-Ru Shih, Hsinchu, TW;
Chih-Yuan Chuang, Hsinchu, TW;
Chun-I Fan, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/15 (2006.01); H01L 21/02 (2006.01); C30B 7/00 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C30B 7/005 (2013.01); H01L 21/02123 (2013.01); H01L 21/3226 (2013.01);
Abstract
An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (Å) and 500 angstroms.