Wen-Ching Hsu

This inventor holds 55 USPTO granted patents and 21 published patent applications and 1 EPO patent, primarily in Silicon Crystal Growth (CPC class H01L). Top assignees: Sino-American Silicon Products Inc., Globalwafers Co., Ltd., National Sun Yat-Sen University of Kaohsiung. Active years: 2010-2024.

USPTO Granted Patents = 55 (Patent Applications = 21)

% Patents Active = 52.7

EPO Patents = 1

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 21(Granted Patents)

Forward Citations (Not Self Cited) = 18(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Sanchong, TW (2010)
Hsinchu Science Park, TW (2017 - 2018)
Hsinchu, TW (2010 - 2024)

Company Filing History:

28 out of 33

Sino-American Silicon Products Inc.

patents

25 out of 315

Globalwafers Co., Ltd.

patents

3 out of 282

National Sun Yat-Sen University of Kaohsiung

patents

4. 1 out of 1

Sino-American Sulicon Products Inc.

patent

5. 4 out of 834,411

Other

patents

where one patent can have more than one assignee

Years Active: 2010-2024

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Areas of Expertise:

Silicon Ingot

Epitaxy Substrate

GaN Semiconductors

Crystal Growth

Polycrystalline Silicon

Semiconductor Device

Nucleation Promotion Layer

Wafer Carrier

Mono-Crystalline Silicon

Thermal Insulation

Crucible Assembly

Optical Device

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12163247 - Method for producing silicon ingot single crystal (2024-12-10),

2. 12119382 - Buffer layer structure to improve gan semiconductors (2024-10-15),

3. 12037697 - Apparatus for producing Si ingot single crystal (2024-07-16),

4. 12037696 - Method for producing Si ingot single crystal, Si ingot single crystal, and apparatus thereof (2024-07-16),

5. 11923422 - Semiconductor device (2024-03-05),

6. 11859965 - Material analysis method (2024-01-02),

7. 11708642 - Mono-crystalline silicon growth apparatus (2023-07-25),

8. 11705489 - Buffer layer structure to improve GaN semiconductors (2023-07-18),

9. 11688628 - Method of manufacturing epitaxy substrate (2023-06-27),

10. 11538681 - Epitaxy substrate and method of manufacturing the same (2022-12-27),

11. 11377752 - Mono-crystalline silicon growth method (2022-07-05),

12. 11326272 - Mono-crystalline silicon growth apparatus (2022-05-10),

13. 11201080 - Epitaxy substrate and method of manufacturing the same (2021-12-14),

14. 10825940 - Polycrystalline silicon column and polycrystalline silicon wafer (2020-11-03),

15. 10608078 - Bonded substrate for epitaxial growth and method of forming the same (2020-03-31),

Title: The Innovative Journey of Wen-Ching Hsu

Introduction: Wen-Ching Hsu, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Wen-Ching Hsu's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Wen-Ching Hsu has established herself as a leading figure in the tech industry. Her work has been instrumental in shaping the future of sustainable energy solutions.

Collaborations: Throughout her career, Wen-Ching Hsu has collaborated with top research institutions and leading tech companies to further her innovative projects. Her ability to work across disciplines has led to the successful implementation of cutting-edge technologies.

Conclusion: Wen-Ching Hsu's relentless pursuit of innovation and her dedication to creating a more sustainable future through technology make her a true trailblazer in the field of inventors. Her work continues to inspire and drive progress in the ever-evolving tech landscape.