The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Aug. 26, 2016
Applicant:
Sino-american Silicon Products Inc., Hsinchu Science Park, TW;
Inventors:
Cheng-Jui Yang, Hsinchu, TW;
Huang Wei Lin, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Kuo-Wei Chuang, Hsinchu, TW;
Ming-Kung Hsiao, Hsinchu, TW;
Yuan Hsiao Chang, Hsinchu, TW;
Bo-Kai Wang, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Sung Lin Hsu, Hsinchu, TW;
I-Ching Li, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Assignee:
Sino-American Silicon Products Inc., Hsinchu Science Park, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0368 (2006.01); H01L 31/18 (2006.01); C30B 11/00 (2006.01); C01B 33/02 (2006.01); C30B 28/06 (2006.01); C30B 29/06 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03682 (2013.01); C01B 33/02 (2013.01); C30B 11/00 (2013.01); C30B 28/06 (2013.01); C30B 29/06 (2013.01); C30B 29/605 (2013.01); H01L 31/182 (2013.01); C01P 2002/60 (2013.01); C01P 2002/90 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01); Y02E 10/546 (2013.01); Y02P 70/50 (2015.11);
Abstract
A polycrystalline silicon wafer is provided. The polycrystalline silicon wafer, includes a plurality of silicon grains, wherein the carbon content of the polycrystalline silicon wafer is greater than 4 ppma, and the resistivity of the polycrystalline silicon wafer is greater than or equal to 1.55 Ω-cm.