Sung Lin Hsu

Title: Innovations of Sung Lin Hsu in Polycrystalline Silicon Technology

Introduction

Sung Lin Hsu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of silicon technology, particularly in the development of polycrystalline silicon materials. With a total of three patents to his name, Hsu's work is recognized for its innovative approach and technical advancements.

Latest Patents

Hsu's latest patents include a polycrystalline silicon wafer and a polycrystalline silicon column. The polycrystalline silicon wafer features a plurality of silicon grains, with a carbon content exceeding 4 ppma and a resistivity of at least 1.55 Ω-cm. This innovation aims to enhance the performance and efficiency of silicon wafers in various applications. Additionally, the polycrystalline silicon column is designed with silicon grains that grow along a specific crystal-growing direction. In this design, the average grain size and resistivity exhibit opposite trends, while the average grain size and oxygen content show contrasting variations. The defect area ratio of the column is maintained at an overall average of less than or equal to 2.5%, ensuring high-quality material production.

Career Highlights

Sung Lin Hsu is currently employed at Sino-American Silicon Products Inc., where he continues to push the boundaries of silicon technology. His work has been instrumental in advancing the understanding and application of polycrystalline silicon materials in the industry.

Collaborations

Hsu collaborates with esteemed colleagues such as Yu-Min Yang and Wen-Huai Yu. Their combined expertise contributes to the innovative projects at Sino-American Silicon Products Inc.

Conclusion

Sung Lin Hsu's contributions to polycrystalline silicon technology exemplify the spirit of innovation in the field. His patents reflect a commitment to enhancing material performance and advancing technological applications.