The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Apr. 28, 2015
Sino-american Silicon Products Inc., Hsinchu, TW;
Hung-Sheng Chou, Hsinchu, TW;
Yu-Min Yang, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Sung Lin Hsu, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Chung-Wen Lan, Taipei, TW;
Yu-Ting Wong, Taichung, TW;
SINO-AMERICAN SILICON PRODUCTS INC., Hsinchu, TW;
Abstract
Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-Σ grain boundary from about 60 to about 75 and a percentage of Σ3 grain boundary from about 12 to about 25.